Specification	NVMFS5H610NLT1G

Current - Continuous Drain (Id) @ 25°C	13 A, 48 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	880 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.6 W, 52 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NVMFS5H610NL Series

Power MOSFET 60 V, 10 mΩ, 48 A, Single N−Channel

Part	Qualification	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Grade	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NVMFS5H610NLT1G	AEC-Q101	3.6 W 52 W	-55 °C	175 ░C	880 pF	MOSFET (Metal Oxide)	Automotive	Surface Mount	4.5 V 10 V	8-PowerTDFN 5 Leads	2 V	60 V	13 A 48 A	20 V	5-DFN (5x6)	8-SOFL	10 mOhm	N-Channel	13.7 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET 60 V, 10 mΩ, 48 A, Single N−Channel NVMFS5H610NLWF − Wettable Flank Option for Enhanced Optical Inspection