
AIDK10S65C5ATMA1
ActiveSILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 650 V, 10 A, 15 NC, TO-263
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AIDK10S65C5ATMA1
ActiveSILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 650 V, 10 A, 15 NC, TO-263
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Technical Specifications
Parameters and characteristics for this part
| Specification | AIDK10S65C5ATMA1 |
|---|---|
| Capacitance @ Vr, F | 303 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 60 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | PG-TO263-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
AIDK10 Series
Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.
Documents
Technical documentation and resources