HER308GA-G

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DIODE GEN PURP 1KV 3A DO27

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Discrete Semiconductor Products

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DIODE GEN PURP 1KV 3A DO27

Technical Specifications

Parameters and characteristics for this part

Specification	HER308GA-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Axial, DO-27, DO-201AA
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-27
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Technology	Mounting Type
Comchip Technology HER308GA-G	1.7 V	1000 V	5 µA	150 °C	-55 °C	DO-27	200 mA 500 ns	75 ns	Axial DO-201AA DO-27	3 A	Standard	Through Hole
Comchip Technology HER308GT-G	1.7 V	1000 V	5 µA	150 °C	-55 °C	DO-27	200 mA 500 ns	75 ns	Axial DO-201AA DO-27	3 A	Standard	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 3A Through Hole DO-27

Technical documentation and resources

No documents available