Discrete Semiconductor Products
PSMN4R2-40VSHX
ActiveNexperia USA Inc.
DUAL N-CHANNEL 40 V, 4.2 MOHM STANDARD LEVEL MOSFET IN LFPAK56D (HALF-BRIDGE CONFIGURATION)
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Discrete Semiconductor Products
PSMN4R2-40VSHX
ActiveNexperia USA Inc.
DUAL N-CHANNEL 40 V, 4.2 MOHM STANDARD LEVEL MOSFET IN LFPAK56D (HALF-BRIDGE CONFIGURATION)
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Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN4R2-40VSHX |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 98 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2590 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Power - Max | 85 W |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm |
| Supplier Device Package | LFPAK56D |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1426 | $ 3.17 | |
Description
General part information
PSMN4R2-40VSH Series
Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology.
Documents
Technical documentation and resources