Specification	SSM3J35AFS,LF

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	42 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-416, SC-75
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	SSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM3J35AFS Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-416(SSM)

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3J35AFS,LF	1.2 V	4.5 V	Surface Mount	42 pF	SC-75 SOT-416	P-Channel	MOSFET (Metal Oxide)	1 V	150 mW	10 V	SSM	1.4 Ohm	250 mA	150 °C	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	24655	$ 0.22

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-416(SSM)

Technical documentation and resources