Discrete Semiconductor Products

SI7164DP-T1-GE3

LTB

MOSFET N-CH 60V 60A PPAK SO-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7164DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	75 nC
Input Capacitance (Ciss) (Max)	2830 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	104 W, 6.25 W
Rds On (Max)	6.25 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

Part	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Mounting Type	Vgs (Max)	Package Name	Technology	Input Capacitance (Ciss) (Max)
Vishay Dale SI7164DP-T1-GE3	PowerPAK® SO-8	6.25 W 104 W	-55 °C	150 °C	10 V	4.5 V	60 V	6.25 mOhm	N-Channel	60 A	75 nC	Surface Mount	20 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	2830 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 2.80	30d+
		10	$ 2.35
		100	$ 1.90
		500	$ 1.69
		1000	$ 1.45
	Digi-Reel®	1	$ 2.80	30d+
		10	$ 2.35
		100	$ 1.90
		500	$ 1.69
		1000	$ 1.45
	N/A	0	$ 1.48	30d+
	Tape & Reel (TR)	3000	$ 1.36	30d+
		6000	$ 1.31

3D models and CAD resources for this part

General part information

N-Channel 60 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources