Discrete Semiconductor Products

MA2C85600E

Obsolete

DIODE GEN PURP 35V 100MA DO34-A1

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 35V 100MA DO34-A1

Technical Specifications

Parameters and characteristics for this part

Specification	MA2C85600E

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	85 °C
Operating Temperature - Junction [Min]	-25 °C
Package / Case	DO-34, DO-204AG, Axial
Speed	Any Speed
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Mounting Type	Current - Average Rectified (Io)	Package / Case	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr
Panasonic Industrial Automation Sales MA2C85600E	35 V	Standard	Through Hole	100 mA	Axial DO-204AG DO-34	Any Speed	200 mA	85 °C	-25 °C	2 pF	1 V	100 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 35 V 100mA Through Hole DO34-A1

Technical documentation and resources