Discrete Semiconductor Products

BSS225H6327XTSA1

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MOSFET N-CH 600V 90MA SOT89

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 90MA SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	BSS225H6327XTSA1

Current - Continuous Drain (Id) @ 25°C	90 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	131 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power Dissipation (Max)	1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	45 Ohm
Supplier Device Package	PG-SOT89
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Grade
INFINEON BSS225H6327XTSA1	20 V	Surface Mount	131 pF	1 W	N-Channel	45 Ohm	PG-SOT89	2.3 V	5.8 nC	MOSFET (Metal Oxide)	600 V	90 mA	TO-243AA	4.5 V 10 V	AEC-Q101	150 °C	-55 °C	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 600 V 90mA (Ta) 1W (Ta) Surface Mount PG-SOT89

Technical documentation and resources