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DocumentsQSD6HCS65U | Datasheet
Deep-Dive with AI
DocumentsQSD6HCS65U | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | QSD6HCS65U |
|---|---|
| Capacitance @ Vr, F | 421 pF |
| Current - Average Rectified (Io) | 21 A |
| Current - Reverse Leakage @ Vr | 15 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-247-2 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-247-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3000 | $ 0.80 | |
Description
General part information
QSD6HCS65U
SIC 6AMP 650V SCHOTTKY BARRIER D
Documents
Technical documentation and resources