Discrete Semiconductor Products

NTQD6866R2G

Obsolete

POWER MOSFET 6.9 AMPS, 20 VOLTS N-CHANNEL TSSOP-8

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Discrete Semiconductor Products

Obsolete

POWER MOSFET 6.9 AMPS, 20 VOLTS N-CHANNEL TSSOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	NTQD6866R2G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	940 mW
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Configuration	Vgs(th) (Max) @ Id	Technology	Package / Case	Package / Case [custom]	Package / Case [custom]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	FET Feature
ON Semiconductor NTQD6866R2G	22 nC	8-TSSOP	2 N-Channel (Dual)	1.2 V	MOSFET (Metal Oxide)	8-TSSOP	0.173 "	4.4 mm	940 mW	4.7 A	20 V	-55 °C	150 °C	32 mOhm	Surface Mount	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8

Technical documentation and resources