Discrete Semiconductor Products

SFT1423-E

Obsolete

MOSFET N-CH 500V 2A TP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 2A TP

Technical Specifications

Parameters and characteristics for this part

Specification	SFT1423-E

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.7 nC
Input Capacitance (Ciss) (Max) @ Vds	175 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	20 W, 1 W
Rds On (Max) @ Id, Vgs	4.9 Ohm
Supplier Device Package	IPAK/TP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package
ON Semiconductor SFT1423-E	2 A	500 V	20 V	4 V	10 V	MOSFET (Metal Oxide)	4.9 Ohm	150 °C	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	175 pF	1 W 20 W	8.7 nC	N-Channel	IPAK/TP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 2A (Ta) 1W (Ta), 20W (Tc) Through Hole IPAK/TP

Technical documentation and resources

No documents available