Discrete Semiconductor Products

PMV75UP,215

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MOSFET P-CH 20V 2.5A TO236AB

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Discrete Semiconductor Products

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MOSFET P-CH 20V 2.5A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV75UP,215

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	5 W, 490 mW
Rds On (Max) @ Id, Vgs [Max]	102 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)
Freescale Semiconductor - NXP PMV75UP,215	2.5 A	TO-236AB	P-Channel	-55 °C	150 °C	550 pF	102 mOhm	MOSFET (Metal Oxide)	Surface Mount	900 mV	SC-59 SOT-23-3 TO-236-3	7.5 nC	1.8 V 4.5 V	5 W 490 mW	20 V	12 V

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General part information

P-Channel 20 V 2.5A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB

Technical documentation and resources