AIMBG120R030M1XTMA1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 70 A, 1.2 KV, 0.038 OHM, TO-263HV
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AIMBG120R030M1XTMA1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 70 A, 1.2 KV, 0.038 OHM, TO-263HV
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Technical Specifications
Parameters and characteristics for this part
| Specification | AIMBG120R030M1XTMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20 V, 18 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1738 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (7 Leads + Tab), TO-263-8, TO-263CA |
| Power Dissipation (Max) | 333 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 38 mOhm |
| Supplier Device Package | PG-TO263-7-12 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) [Max] | 23 V |
| Vgs (Max) [Min] | -5 V |
| Vgs(th) (Max) @ Id | 5.1 V |
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Package / Case | Vgs (Max) [Max] | Vgs (Max) [Min] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification | Grade | Power Dissipation (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Infineon Technologies | |||||||||||||||||||||
 Infineon Technologies | N-Channel | 187 A | 1200 V | Surface Mount | -55 °C | 347 °F | PG-TO263-7-12 | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | |||||||||||||
Infineon Technologies | N-Channel | 38 A | 1200 V | Surface Mount | -55 °C | 175 ░C | PG-TO263-7-12 | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | 23 V | -5 V | 5.1 V | 32 nC | AEC-Q101 | Automotive | 202 W | SiC (Silicon Carbide Junction Transistor) | 18 V 20 V | 75 mOhm | 880 pF | ||
Infineon Technologies | N-Channel | 17 A | 1200 V | Surface Mount | -55 °C | 175 ░C | PG-TO263-7-12 | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | 23 V | -5 V | 5.1 V | 14 nC | AEC-Q101 | Automotive | 106 W | SiC (Silicon Carbide Junction Transistor) | 18 V 20 V | 200 mOhm | 350 pF | ||
 Infineon Technologies | N-Channel | 104 A | 1200 V | Surface Mount | -55 °C | 175 ░C | PG-TO263-7-12 | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | 23 V | -5 V | 5.1 V | AEC-Q101 | Automotive | SiC (Silicon Carbide Junction Transistor) | 18 V 20 V | 25 mOhm | 2667 pF | 82 nC | 468 W | ||
Infineon Technologies | N-Channel | 30 A | 1200 V | Surface Mount | -55 °C | 347 °F | PG-TO263-7-12 | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | |||||||||||||
Infineon Technologies | N-Channel | 70 A | 1200 V | Surface Mount | -55 °C | 175 ░C | PG-TO263-7-12 | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | 23 V | -5 V | 5.1 V | AEC-Q101 | Automotive | 333 W | SiC (Silicon Carbide Junction Transistor) | 18 V 20 V | 38 mOhm | 1738 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
AIMBG120 Series
With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
Documents
Technical documentation and resources
No documents available