Discrete Semiconductor Products

PJX8803_R1_00001

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MOSFETS 20V P-CHANNEL ENHANCEMENT MODE MOSFETESD PROTECTED

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Discrete Semiconductor Products

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MOSFETS 20V P-CHANNEL ENHANCEMENT MODE MOSFETESD PROTECTED

Technical Specifications

Parameters and characteristics for this part

Specification	PJX8803_R1_00001

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	2.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	151 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs [Max]	340 mOhm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Package / Case	Supplier Device Package	Power - Max [Max]	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs [Max]	Configuration
Panjit International Inc. PJX8803_R1_00001	SOT-563 SOT-666	SOT-563	300 mW	MOSFET (Metal Oxide)	Surface Mount	20 V	1 V	2.2 nC	151 pF	600 mA	150 °C	-55 °C	340 mOhm	2 P-Channel (Dual)

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MOSFETS 20V P-CHANNEL ENHANCEMENT MODE MOSFETESD PROTECTED

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