Discrete Semiconductor Products

IRG6B330UDPBF

Obsolete

IRG6B330UD - IGBT WITH ANTI-PARA

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Discrete Semiconductor Products

Obsolete

IRG6B330UD - IGBT WITH ANTI-PARA

Technical Specifications

Parameters and characteristics for this part

Specification	IRG6B330UDPBF

Current - Collector (Ic) (Max) [Max]	70 A
Gate Charge	85 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3
Power - Max [Max]	160 W
Reverse Recovery Time (trr)	60 ns
Supplier Device Package	TO-220AB
Td (on/off) @ 25°C	176 ns, 47 ns
Test Condition	10 Ohm, 25 A, 196 V
Vce(on) (Max) @ Vge, Ic	2.76 V
Voltage - Collector Emitter Breakdown (Max) [Max]	330 V

Part	IGBT Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic	Reverse Recovery Time (trr)	Test Condition	Gate Charge	Power - Max [Max]	Td (on/off) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
INFINEON IRG6B330UDPBF	Trench	70 A	330 V	TO-220-3	2.76 V	60 ns	10 Ohm 25 A 196 V	85 nC	160 W	47 ns 176 ns	TO-220AB	-40 °C	150 °C	Through Hole
INFINEON IRG6B330UDPBF	Trench	70 A	330 V	TO-220-3	2.76 V	60 ns	10 Ohm 25 A 196 V	85 nC	160 W	47 ns 176 ns	TO-220AB	-40 °C	150 °C	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench 330 V 70 A 160 W Through Hole TO-220AB

Technical documentation and resources