Discrete Semiconductor Products

IRFI9640G

Obsolete

MOSFET P-CH 200V 6.1A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 200V 6.1A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFI9640G

Current - Continuous Drain (Id) @ 25°C	6.1 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRFI9640G	20 V	Through Hole	MOSFET (Metal Oxide)	6.1 A	-55 °C	150 °C	500 mOhm	200 V	TO-220-3 Full Pack Isolated Tab	TO-220-3	40 W	1200 pF	4 V	44 nC	P-Channel	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 200 V 6.1A (Tc) 40W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available