Discrete Semiconductor Products

MCG08P06HE3-TP

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	MCG08P06HE3-TP

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	4304 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 C
Package / Case	8-VDFN Exposed Pad
Power Dissipation (Max)	20.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	28.4 mOhm
Supplier Device Package	DFN3333
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Grade	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Qualification	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
MCC (Micro Commercial Components) MCG08P06HE3-TP	-55 C	150 °C	8 A	8-VDFN Exposed Pad	Automotive	60 V	28.4 mOhm	4304 pF	4.5 V 10 V	MOSFET (Metal Oxide)	P-Channel	AEC-Q101	20 V	Surface Mount	3 V	20.8 W	DFN3333	61 nC
MCC (Micro Commercial Components) MCG08P06HE3-TP	-55 C	150 °C	8 A	8-VDFN Exposed Pad	Automotive	60 V	28.4 mOhm	4304 pF	4.5 V 10 V	MOSFET (Metal Oxide)	P-Channel	AEC-Q101	20 V	Surface Mount	3 V	20.8 W	DFN3333	61 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 8A 20.8W Surface Mount DFN3333

Technical documentation and resources