Discrete Semiconductor Products

2SK3714(0)-S12-AZ

Obsolete

2SK3714 - SWITCHING N-CHANNEL

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Discrete Semiconductor Products

Obsolete

2SK3714 - SWITCHING N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3714(0)-S12-AZ

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Isolated Tab
Power Dissipation (Max)	2 W, 35 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	MP-45F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Power MOSFETs for Automotive

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation 2SK3714(0)-S12-AZ	N-Channel	4 V	10 V	60 nC	Through Hole	3200 pF	20 V	MOSFET (Metal Oxide)	60 V	TO-220-3 Isolated Tab	150 °C	2 W 35 W	2.5 V	MP-45F	13 mOhm	50 A
Renesas Electronics Corporation 2SK3714-S12-AZ	N-Channel	4 V	10 V	60 nC	Through Hole	3200 pF	20 V	MOSFET (Metal Oxide)	60 V	TO-220-3 Isolated Tab	150 °C	2 W 35 W	2.5 V	MP-45F	13 mOhm	50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	7805	$ 2.68

General part information

Nch Single Power MOSFET 60V 50A 13mohm MP-45F/TO-220 Automotive

Technical documentation and resources