Discrete Semiconductor Products

DTC363EKT146

NRND

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.6A I(C), 20V V(BR)CEO, 1-ELEMENT, NPN, SILICON, SMT3, SC-59, 3 PIN

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Discrete Semiconductor Products

NRND

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.6A I(C), 20V V(BR)CEO, 1-ELEMENT, NPN, SILICON, SMT3, SC-59, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	DTC363EKT146

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	6.8 kOhms
Resistor - Emitter Base (R2)	6.8 kOhms
Supplier Device Package	SMT3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	80 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Supplier Device Package	Resistor - Emitter Base (R2)	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Power - Max [Max]
Rohm Semiconductor DTC363EKT146	SMT3	6.8 kOhms	200 MHz	20 V	70	NPN - Pre-Biased	80 mV	Surface Mount	6.8 kOhms	600 mA	500 nA	SC-59 SOT-23-3 TO-236-3	200 mW
Rohm Semiconductor DTC363TKT146	SMT3		200 MHz	15 V		NPN - Pre-Biased	80 mV	Surface Mount	6.8 kOhms	600 mA	500 nA	SC-59 SOT-23-3 TO-236-3	200 mW

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20 V 600 mA 200 MHz 200 mW Surface Mount SMT3

Technical documentation and resources

No documents available