Discrete Semiconductor Products

GI502-E3/54

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DIODE STANDARD 200V 3A DO201AD

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Discrete Semiconductor Products

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DIODE STANDARD 200V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	GI502-E3/54

Capacitance @ Vr, F	28 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 ÁA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-50 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	2 µs
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed [Min]	Capacitance @ Vr, F	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Technology	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Supplier Device Package
Vishay General Semiconductor - Diodes Division GI502-E3/54	DO-201AD Axial	200 V	200 mA 500 ns	28 pF	Through Hole	150 °C	-50 °C	3 A	1.1 V	Standard	2 µs	5 ÁA	DO-201AD

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General part information

Diode 200 V 3A Through Hole DO-201AD

Technical documentation and resources