Discrete Semiconductor Products

AOTF66613L

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MOSFET N-CH 60V 44.5A/90A TO220F

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Discrete Semiconductor Products

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MOSFET N-CH 60V 44.5A/90A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF66613L

Current - Continuous Drain (Id) @ 25°C	90 A, 44.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	8.3 W, 34.5 W
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AOTF66613L	TO-220F	20 V	5300 pF	8.3 W 34.5 W	8 V 10 V	3.5 V	Through Hole	110 nC	MOSFET (Metal Oxide)	44.5 A 90 A	TO-220-3 Full Pack	N-Channel	150 °C	-55 °C	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 44.5A (Ta), 90A (Tc) 8.3W (Ta), 34.5W (Tc) Through Hole TO-220F

Technical documentation and resources