Discrete Semiconductor Products

PJD4NA60_L2_00001

NRND

600V N-CHANNEL MOSFET

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Discrete Semiconductor Products

NRND

600V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJD4NA60_L2_00001

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	77 W
Rds On (Max) @ Id, Vgs [Max]	2.4 Ohm
Supplier Device Package	TO-252, TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Panjit International Inc. PJD4NA60_L2_00001	TO-252 TO-252AA	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	2.4 Ohm	4 V	4 A	77 W	N-Channel	MOSFET (Metal Oxide)	10 V	Surface Mount	450 pF	150 °C	-55 °C

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General part information

N-Channel 600 V 4A (Ta) 77W (Tc) Surface Mount TO-252

Technical documentation and resources

No documents available