Sensors, Transducers

BPW85

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PHOTOTRANSISTOR 450 TO 1080 NM

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Sensors, Transducers

Active

PHOTOTRANSISTOR 450 TO 1080 NM

Technical Specifications

Parameters and characteristics for this part

Specification	BPW85

Current - Collector (Ic) (Max)	0.05 mA
Current - Dark (Id) (Max)	200 nA
Mounting Type	Through Hole
Operating Temperature (Max)	100 °C
Operating Temperature (Min)	-40 °C
Orientation	Top View
Package / Case	Radial
Power - Max	150 mW
Viewing Angle	50 °
Voltage - Collector Emitter Breakdown (Max)	70 V
Wavelength	850 nm

Part	Current - Collector (Ic) (Max)	Orientation	Power - Max	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	Current - Dark (Id) (Max)	Viewing Angle	Wavelength
Vishay Semiconductor Opto Division BPW85	0.05 mA	Top View	150 mW	Through Hole	70 V	Radial	100 °C	-40 °C	200 nA	50 °	850 nm
Vishay Semiconductor Opto Division BPW85C	0.1 mA	Top View	100 mW	Through Hole	70 V	Radial	100 °C	-40 °C	200 nA	50 °	850 nm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Phototransistors 850nm Top View Radial

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