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DO-213AA
Discrete Semiconductor Products

RGL34AHE3/98

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 500MA DO213AA

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DO-213AA
Discrete Semiconductor Products

RGL34AHE3/98

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 500MA DO213AA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRGL34AHE3/98
Capacitance @ Vr, F4 pF
Current - Average Rectified (Io)500 mA
Current - Reverse Leakage @ Vr5 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-213AA (Glass)
Reverse Recovery Time (trr)150 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-213AA (GL34)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]50 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

RGL34 Series

Diode 50 V 500mA Surface Mount DO-213AA (GL34)

Documents

Technical documentation and resources