Discrete Semiconductor Products

IXTH02N450HV

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Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 4.5 KV, 200 MA, 625 OHM, TO-247HV, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet

Discrete Semiconductor Products

IXTH02N450HV

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 4.5 KV, 200 MA, 625 OHM, TO-247HV, THROUGH HOLE

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH02N450HV

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	4500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.6 nC
Input Capacitance (Ciss) (Max) @ Vds	246 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max) [Max]	113 W
Rds On (Max) @ Id, Vgs	625 Ohm
Supplier Device Package	TO-247HV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	6.5 V

IXTH02N450HV Series

DiscMosfet NCh Std-VeryHiVolt TO-247AD

Part	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXTH02N450HV	MOSFET (Metal Oxide)	4500 V	200 mA	113 W	TO-247-3 Variant	TO-247HV	625 Ohm	246 pF	6.5 V	20 V	10.6 nC	N-Channel	10 V	-55 °C	150 °C	Through Hole
Littelfuse/Commercial Vehicle Products IXTH02N250	MOSFET (Metal Oxide)	2500 V	200 mA		TO-247-3	TO-247 (IXTH)	450 Ohm		4.5 V	20 V		N-Channel	10 V	-55 °C	150 °C	Through Hole	116 pF	7.4 nC	83 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 25.54
		30	$ 21.17
		120	$ 19.85
		510	$ 16.94
Newark	Each	1	$ 25.25
		5	$ 23.17
		10	$ 21.09
		25	$ 19.01
		100	$ 16.93
		500	$ 16.05

Description

General part information

IXTH02N450HV Series

The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet