Discrete Semiconductor Products

VBO160-12NO7

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BIPOLAR MODULE - DIODE PWS-E/ BOX

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Discrete Semiconductor Products

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BIPOLAR MODULE - DIODE PWS-E/ BOX

Technical Specifications

Parameters and characteristics for this part

Specification	VBO160-12NO7

Current - Average Rectified (Io)	174 A
Current - Reverse Leakage @ Vr	200 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	PWS-E
Supplier Device Package	PWS-E
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.07 V
Voltage - Peak Reverse (Max)	1.2 kV

Bipolar Module - Diode PWS-E

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Reverse Leakage @ Vr	Diode Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Technology	Mounting Type
LITTELFUSE VBO160-12NO7	-40 °C	150 °C	200 µA	Single Phase	1.07 V	PWS-E	PWS-E	1.2 kV	174 A	Standard	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes in various packages made for main rectification in 1 phase bridge configurations.

Technical documentation and resources