Discrete Semiconductor Products

SIZ730DT-T1-GE3

Obsolete

MOSFET 2N-CH 30V 16A 6PWRPAIR

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 16A 6PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ730DT-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	24 nC
Input Capacitance (Ciss) (Max) @ Vds	830 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerPair™
Power - Max [Max]	48 W
Power - Max [Min]	27 W
Rds On (Max) @ Id, Vgs	9.3 mOhm
Supplier Device Package	6-PowerPair™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Configuration	Package / Case	FET Feature	Supplier Device Package	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power - Max [Min]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIZ730DT-T1-GE3	24 nC	2.2 V	2 N-Channel (Half Bridge)	6-PowerPair™	Logic Level Gate	6-PowerPair™	MOSFET (Metal Oxide)	Surface Mount	830 pF	30 V	27 W	48 W	9.3 mOhm	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™

Technical documentation and resources