littelfuse-power-semiconductor_Y4-M6_YF_X126d

Discrete Semiconductor Products

MEO500-06DA

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LITTELFUSE

DIODE GEN PURP 600V 514A Y4-M6

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Discrete Semiconductor Products

MEO500-06DA

Active

LITTELFUSE

DIODE GEN PURP 600V 514A Y4-M6

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MEO500-06DA

Current - Average Rectified (Io)	514 A
Current - Reverse Leakage @ Vr	24 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Y4-M6
Reverse Recovery Time (trr)	300 ns
Speed	500 ns, 200 mA
Supplier Device Package	Y4-M6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.52 V

MEO500 Series

Part	Reverse Recovery Time (trr)	Speed	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Package / Case	Supplier Device Package
LITTELFUSE MEO500-06DA	300 ns	200 mA 500 ns	Standard	-40 °C	150 °C	24 mA	1.52 V	600 V	514 A	Chassis Mount	Y4-M6	Y4-M6

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Box	1	$ 80.39	1m+
		10	$ 73.39
		100	$ 66.39
	N/A	192	$ 81.00	1m+

Description

General part information

MEO500 Series

The Fast Single Diode series offers various packages and breakdown voltages up to 1200V. Utilizing FRED dies enables fast reverse recovery capabilities.

Documents

Technical documentation and resources