IXFN230N20T
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 220 A, 200 V, 0.0075 OHM, 10 V, 5 V
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IXFN230N20T
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 220 A, 200 V, 0.0075 OHM, 10 V, 5 V
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN230N20T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 220 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 378 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 1090 W |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 36.61 | |
| 10 | $ 32.62 | |||
| 100 | $ 28.63 | |||
Description
General part information
IXFN230N20T Series
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density
Documents
Technical documentation and resources