Specification	BC859BLT1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	220 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Supplier Device Package	SOT-23-3 (TO-236)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	650 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

BC859BL Series

General Purpose Transistor

Part	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
ON Semiconductor BC859BLT1G	100 MHz	SOT-23-3 (TO-236)	220 hFE	PNP	100 mA	650 mV	SC-59 SOT-23-3 TO-236-3	Surface Mount	15 nA	-55 °C	150 °C	30 V
ON Semiconductor BC859CMTF	150 MHz	SOT-23-3		PNP	100 mA	650 mV	SC-59 SOT-23-3 TO-236-3	Surface Mount	15 nA			30 V	310 mW	420	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BC859BL Series

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Documents

Technical documentation and resources

Package Drawing-318-SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

Package Drawing