Discrete Semiconductor Products

MPSL01_D26Z

Obsolete

TRANS NPN 120V 0.2A TO92-3

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Discrete Semiconductor Products

Obsolete

TRANS NPN 120V 0.2A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	MPSL01_D26Z

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	60 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Transistor Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor MPSL01_D26Z	NPN	625 mW	300 mV	60 MHz	TO-92-3	120 V	-55 °C	150 °C	200 mA	TO-226-3 TO-92-3	Through Hole	1 µA	50
ON Semiconductor MPSL01_D27Z	NPN	625 mW	300 mV	60 MHz	TO-92-3	120 V	-55 °C	150 °C	200 mA	TO-226-3 TO-92-3	Through Hole	1 µA	50

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 120 V 200 mA 60MHz 625 mW Through Hole TO-92-3

Technical documentation and resources