Discrete Semiconductor Products

FR207GP-TP

Active

DIODE GEN PURP 1KV 2A DO15

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 1KV 2A DO15

Technical Specifications

Parameters and characteristics for this part

Specification	FR207GP-TP

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AC, DO-15, Axial
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-15
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Mounting Type	Capacitance @ Vr, F	Current - Average Rectified (Io)	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Current - Reverse Leakage @ Vr
Micro Commercial Components FR207GP-TP	150 °C	-55 °C	1.3 V	Standard	1000 V	200 mA 500 ns	Through Hole	40 pF	2 A	Axial DO-15 DO-204AC	500 ns	DO-15	5 µA
Micro Commercial Components FR207-TP	150 °C	-55 °C	1.3 V	Standard	1000 V	200 mA 500 ns	Through Hole	40 pF	2 A	Axial DO-15 DO-204AC	500 ns	DO-15	5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 2A Through Hole DO-15

Technical documentation and resources