Discrete Semiconductor Products

SQD23N06-31L_T4GE3

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MOSFET N-CH 60V 23A TO252AA

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Discrete Semiconductor Products

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MOSFET N-CH 60V 23A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	SQD23N06-31L_T4GE3

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	845 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	37 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Mounting Type	Technology	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SQD23N06-31L_T4GE3	2.5 V	23 A	845 pF	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	24 nC	N-Channel	4.5 V 10 V	AEC-Q101	Surface Mount	MOSFET (Metal Oxide)	Automotive	-55 °C	175 ░C	37 W	60 V	31 mOhm

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General part information

N-Channel 60 V 23A (Tc) 37W (Tc) Surface Mount TO-252AA

Technical documentation and resources