Specification	SB1003M3-TL-W

Capacitance @ Vr, F	27 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SC-70, SOT-323
Reverse Recovery Time (trr)	10 ns
Speed	200 mA, 500 ns
Supplier Device Package	3-MCPH
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	530 mV

SB1003M3 Series

1.0 A, 30 V, Schottky Barrier Diode, Low IR, Single

Part	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Technology	Mounting Type	Supplier Device Package	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
ON Semiconductor SB1003M3-TL-W	200 mA 500 ns	SC-70 SOT-323	530 mV	27 pF	30 V	15 µA	1 A	Schottky	Surface Mount	3-MCPH	10 ns	-55 °C	125 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

SB1003M3 is Schottky Barrier Diode, 30V, 1A, Low IR, Single MCPH3 for High frequency rectification (switching regulators,converters,choppers).