Discrete Semiconductor Products

SIA469DJ-T1-GE3

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MOSFET P-CH 30V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 30V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA469DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1020 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	15.6 W
Rds On (Max) @ Id, Vgs [Max]	26.5 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SIA469DJ-T1-GE3	20 V	12 A	4.5 V 10 V	PowerPAK® SC-70-6	30 V	15 nC	26.5 mOhm	1020 pF	Surface Mount	P-Channel	3 V	MOSFET (Metal Oxide)	-55 °C	150 °C	PowerPAK® SC-70-6 Single	15.6 W

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General part information

P-Channel 30 V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Technical documentation and resources