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VISHAY VS-12TTS08HM3

Discrete Semiconductor Products

R6035VNX3C16

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Rohm Semiconductor

600V 35A TO-220AB, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

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DocumentsTechnical Data Sheet EN θ<sub>JA</sub> and Ψ<sub>JT</sub>+45

VISHAY VS-12TTS08HM3

Discrete Semiconductor Products

R6035VNX3C16

Active

Rohm Semiconductor

600V 35A TO-220AB, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN θ<sub>JA</sub> and Ψ<sub>JT</sub>+45

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6035VNX3C16

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	347 W
Rds On (Max) @ Id, Vgs	114 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	553	$ 6.53
Newark	Each	1	$ 6.40
		10	$ 5.88
		25	$ 4.90
		50	$ 3.92
		100	$ 3.76
		250	$ 3.75
		500	$ 3.49

Description

General part information

R6035VNX3 Series

R6035VNX3 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.

Documents

Technical documentation and resources

Technical Data Sheet EN

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Part Explanation

Application Note

How to Use the Thermal Resistance and Thermal Characteristics Parameters

About Flammability of Materials

Environmental Data

Reduction in Switching Loss of Phase-Shift Full-Bridge Converter using PrestoMOS™ R60xxVNx series

Schematic Design & Verification

Anti-Whisker formation - Transistors

Package Information

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

About Export Regulations

Export Information

Notes for Temperature Measurement Using Forward Voltage of PN Junction

R6035VNX3 Data Sheet

Moisture Sensitivity Level - Transistors

Package Information

TO-220AB Reliability Test Result

Manufacturing Data

Two-Resistor Model for Thermal Simulation

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

R6035VNX3 ESD Data

Characteristics Data

Precautions When Measuring the Rear of the Package with a Thermocouple

What is a Thermal Model? (Transistor)

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

TO-220AB Dimension

Package Information

Types and Features of Transistors

Application Note

PCB Layout Thermal Design Guide

Notes for Calculating Power Consumption:Static Operation

Method for Monitoring Switching Waveform

Schematic Design & Verification

Basics of Thermal Resistance and Heat Dissipation

Judgment Criteria of Thermal Evaluation

Benefits given by PrestoMOS™ series for the Phase-Shift Full-Bridge

Technical Article

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

θ<sub>JC</sub> and Ψ<sub>JT</sub>

TO-220AB Packing Information

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Measurement Method and Usage of Thermal Resistance RthJC

What Is Thermal Design

TO-220AB Explanation for Marking

Package Information

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

TO-220AB Inner Structure

Package Information

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

How to Use LTspice® Models

Schematic Design & Verification

Condition of Soldering / Land Pattern Reference

Package Information

List of Transistor Package Thermal Resistance

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Report of SVHC under REACH Regulation

Environmental Data

Compliance of the RoHS directive

Environmental Data

Notes for Temperature Measurement Using Thermocouples

R6035VNX3 Series

600V 35A TO-220AB, PrestoMOS™ with integrated high-speed diode

Part	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Rohm Semiconductor R6035VNX3C16	114 mOhm	TO-220-3	10 V 15 V	6.5 V	30 V	MOSFET (Metal Oxide)	Through Hole	347 W	35 A	600 V	50 nC	N-Channel	150 °C	2400 pF	TO-220AB