Discrete Semiconductor Products

SISS64DN-T1-GE3

Active

MOSFET N-CH 30V 40A PPAK1212-8S

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 40A PPAK1212-8S

Technical Specifications

Parameters and characteristics for this part

Specification	SISS64DN-T1-GE3

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	57 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SISS64DN-T1-GE3	3420 pF	2.1 mOhm	N-Channel	-55 °C	150 °C	PowerPAK® 1212-8S	Surface Mount	2.2 V	68 nC	-16 V 20 V	MOSFET (Metal Oxide)	30 V	4.5 V 10 V	PowerPAK® 1212-8S	57 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 40A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources