Discrete Semiconductor Products

RJK03B7DPA-00#J53

Obsolete

MOSFET N-CH 30V 30A 8WPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 30A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03B7DPA-00#J53

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	1670 pF
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Rds On (Max) @ Id, Vgs	7.8 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature
Renesas Electronics Corporation RJK03B7DPA-00#J53	MOSFET (Metal Oxide)	11 nC	8-WPAK	7.8 mOhm	30 A	1670 pF	Surface Mount	N-Channel	8-PowerWDFN	30 V
Renesas Electronics Corporation RJK03B7DPA-00#J5A	MOSFET (Metal Oxide)	11 nC	8-WPAK	7.8 mOhm	30 A	1670 pF	Surface Mount	N-Channel	8-PowerWDFN	30 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	541	$ 0.55

General part information

The RJK03B7DPA is a N Channel Power MOSFET.

Technical documentation and resources

No documents available