Discrete Semiconductor Products

PJD80N04_L2_00001

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40V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

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40V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJD80N04_L2_00001

Current - Continuous Drain (Id) @ 25°C	14 A, 80 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1258 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	2 W
Power Dissipation (Max)	66 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	TO-252, TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Technology	Power Dissipation (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Panjit International Inc. PJD80N04_L2_00001	TO-252 TO-252AA	MOSFET (Metal Oxide)	2 W	66 W	4.5 V 10 V	20 V	150 °C	-55 °C	25 nC	2.5 V	1258 pF	N-Channel	5.5 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	40 V	14 A 80 A
Panjit International Inc. PJD80N03_L2_00001	TO-252AA	MOSFET (Metal Oxide)	2 W 55 W		4.5 V 10 V	20 V	150 °C	-55 °C		2.5 V		N-Channel	6 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	30 V	15 A 80 A	1323 pF	12 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 14A (Ta), 80A (Tc) 2W (Ta), 66W (Tc) Surface Mount TO-252

Technical documentation and resources

No documents available