Discrete Semiconductor Products
2SC5359-O(Q)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 230 V, 15 A, TO-3P(L)
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Discrete Semiconductor Products
2SC5359-O(Q)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 230 V, 15 A, TO-3P(L)
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SC5359-O(Q) |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Cutoff (Max) [Max] | 5 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 80 |
| Frequency - Transition | 30 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3PL |
| Power - Max [Max] | 180 W |
| Supplier Device Package | TO-3P(L) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 230 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 4.33 | |
| 10 | $ 2.86 | |||
| 100 | $ 2.02 | |||
| 500 | $ 1.66 | |||
| 1000 | $ 1.56 | |||
| N/A | 0 | $ 4.30 | ||
Description
General part information
2SC5359 Series
Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 180 W Through Hole TO-3P(L)
Documents
Technical documentation and resources