Discrete Semiconductor Products

BYV26D-TAP

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Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 800V 1A SOD57

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Discrete Semiconductor Products

BYV26D-TAP

Active

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 800V 1A SOD57

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BYV26D-TAP

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	2.5 V

BYV26 Series

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Speed
Vishay General Semiconductor - Diodes Division BYV26EGPHE3/73	175 ░C	-65 C	1 A	15 pF	1000 V	DO-204AC	DO-15	Through Hole	5 µA	75 ns	Axial DO-15 DO-204AC	Standard	2.5 V	200 mA 500 ns
Vishay General Semiconductor - Diodes Division BYV26B-TR	175 ░C	-55 C	1 A		400 V	SOD-57		Through Hole	5 µA	30 ns	Axial SOD-57	Avalanche	2.5 V	200 mA 500 ns
Vishay General Semiconductor - Diodes Division BYV26C-TR	175 ░C	-55 C	1 A		600 V	SOD-57		Through Hole	5 µA	30 ns	Axial SOD-57	Avalanche	2.5 V	200 mA 500 ns
Vishay General Semiconductor - Diodes Division BYV26EGP-E3/54	175 ░C	-65 C	1 A	15 pF	1000 V	DO-204AC	DO-15	Through Hole	5 µA	75 ns	Axial DO-15 DO-204AC	Standard	2.5 V	200 mA 500 ns
Vishay General Semiconductor - Diodes Division BYV26D-TAP	175 ░C	-55 C	1 A		800 V	SOD-57		Through Hole	5 µA	75 ns	Axial SOD-57	Avalanche	2.5 V	200 mA 500 ns
Vishay General Semiconductor - Diodes Division BYV26A-TAP	175 ░C	-55 C	1 A		200 V	SOD-57		Through Hole	5 µA	30 ns	Axial SOD-57	Avalanche	2.5 V	200 mA 500 ns
Vishay General Semiconductor - Diodes Division BYV26A-TR	175 ░C	-55 C	1 A		200 V	SOD-57		Through Hole	5 µA	30 ns	Axial SOD-57	Avalanche	2.5 V	200 mA 500 ns
Vishay General Semiconductor - Diodes Division BYV26B-TAP	175 ░C	-55 C	1 A		400 V	SOD-57		Through Hole	5 µA	30 ns	Axial SOD-57	Avalanche	2.5 V	200 mA 500 ns
Vishay General Semiconductor - Diodes Division BYV26E-TAP	175 ░C	-55 C	1 A		1000 V	SOD-57		Through Hole	5 µA	75 ns	Axial SOD-57	Avalanche	2.5 V	200 mA 500 ns
Vishay General Semiconductor - Diodes Division BYV26EGP-E3/73	175 ░C	-65 C	1 A	15 pF	1000 V	DO-204AC	DO-15	Through Hole	5 µA	75 ns	Axial DO-15 DO-204AC	Avalanche	2.5 V	200 mA 500 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.66
		10	$ 0.57
		100	$ 0.40
		500	$ 0.33
		1000	$ 0.28
		2000	$ 0.25
	Tape & Box (TB)	5000	$ 0.22

Description

General part information

BYV26 Series

Diode 800 V 1A Through Hole SOD-57

Documents

Technical documentation and resources