Discrete Semiconductor Products
FDT86106LZ
ActiveON Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 3.2 A, 100 V, 0.08 OHM, 10 V, 1.5 V
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Discrete Semiconductor Products
FDT86106LZ
ActiveON Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 3.2 A, 100 V, 0.08 OHM, 10 V, 1.5 V
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDT86106LZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.2 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 315 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 2.2 W |
| Supplier Device Package | SOT-223-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.91 | |
| 10 | $ 1.22 | |||
| 100 | $ 0.82 | |||
| 500 | $ 0.65 | |||
| 1000 | $ 0.60 | |||
| 2000 | $ 0.55 | |||
| Digi-Reel® | 1 | $ 1.91 | ||
| 10 | $ 1.22 | |||
| 100 | $ 0.82 | |||
| 500 | $ 0.65 | |||
| 1000 | $ 0.60 | |||
| 2000 | $ 0.55 | |||
| Tape & Reel (TR) | 4000 | $ 0.51 | ||
| 8000 | $ 0.51 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.67 | |
| 6000 | $ 0.61 | |||
| 12000 | $ 0.55 | |||
| 18000 | $ 0.53 | |||
| 30000 | $ 0.52 | |||
| ON Semiconductor | N/A | 1 | $ 0.47 | |
Description
General part information
FDT86106LZ Series
This N-Channel logic Level MOSFETs are produced using an advanced Power Trench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.