Discrete Semiconductor Products

BUK7Y4R8-60EX

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BUK7Y4R8-60E - N-CHANNEL 60 V, 4.8 MΩ STANDARD LEVEL MOSFET IN LFPAK56@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

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BUK7Y4R8-60E - N-CHANNEL 60 V, 4.8 MΩ STANDARD LEVEL MOSFET IN LFPAK56@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y4R8-60EX

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	73.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Grade	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Qualification	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP BUK7Y4R8-60EX	SC-100 SOT-669	4.8 mOhm	Automotive	-55 °C	175 ░C	N-Channel	20 V	AEC-Q101	Surface Mount	100 A	73.1 nC	MOSFET (Metal Oxide)	5520 pF	LFPAK56 Power-SO8	10 V	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources