Discrete Semiconductor Products

SI4590DY-T1-GE3

LTB

MOSFET N/P-CH 100V 3.4A 8SOIC

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Discrete Semiconductor Products

LTB

MOSFET N/P-CH 100V 3.4A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4590DY-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.4 A, 2.8 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11.5 nC
Input Capacitance (Ciss) (Max) @ Vds	360 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	2.4 W, 3.4 W
Rds On (Max) @ Id, Vgs	57 mOhm
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Power - Max	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI4590DY-T1-GE3	8-SOIC	8-SOIC	3.9 mm	0.154 in	2.4 W 3.4 W	Surface Mount	2.5 V	57 mOhm	11.5 nC	N and P-Channel	2.8 A 3.4 A	360 pF	-55 °C	150 °C	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 100V 3.4A, 2.8A 2.4W, 3.4W Surface Mount 8-SOIC

Technical documentation and resources