Discrete Semiconductor Products

SI7738DP-T1-GE3

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MOSFET N-CH 150V 30A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 150V 30A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7738DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	96 W, 5.4 W
Rds On (Max) @ Id, Vgs [Max]	38 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case
Vishay General Semiconductor - Diodes Division SI7738DP-T1-GE3	-55 °C	150 °C	5.4 W 96 W	10 V	N-Channel	38 mOhm	PowerPAK® SO-8	20 V	MOSFET (Metal Oxide)	150 V	4 V	53 nC	Surface Mount	2100 pF	30 A	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SI7738DP-T1-E3	-55 °C	150 °C	5.4 W 96 W	10 V	N-Channel	38 mOhm	PowerPAK® SO-8	20 V	MOSFET (Metal Oxide)	150 V	4 V	53 nC	Surface Mount	2100 pF	30 A	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 30A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources