Discrete Semiconductor Products

S4D20120H

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DIODE SIL CARB 1.2KV 20A TO247AC

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Discrete Semiconductor Products

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DIODE SIL CARB 1.2KV 20A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	S4D20120H

Capacitance @ Vr, F	721 pF
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Supplier Device Package	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
SMC Diode Solutions S4D20120H	TO-247AC	SiC (Silicon Carbide) Schottky	Through Hole	1.8 V	1.2 kV	TO-247-2	40 µA	721 pF	0 ns	No Recovery Time	175 ░C	-55 C

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General part information

Diode 1200 V 20A Through Hole TO-247AC

Technical documentation and resources