Discrete Semiconductor Products
PEMD2,315
NRNDFreescale Semiconductor - NXP
TRANS PREBIAS 1NPN 1PNP SOT666
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Discrete Semiconductor Products
PEMD2,315
NRNDFreescale Semiconductor - NXP
TRANS PREBIAS 1NPN 1PNP SOT666
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PEMD2,315 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 60 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-666, SOT-563 |
| Power - Max [Max] | 300 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Supplier Device Package | SOT-666 |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 150 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 8000 | $ 0.08 | |
| 16000 | $ 0.08 | |||
| 24000 | $ 0.07 | |||
| 56000 | $ 0.06 | |||
Description
General part information
PEMD2 Series
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
Documents
Technical documentation and resources
No documents available