Specification	HUF76429S3ST

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs [Max]	22 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

HUF76429S3S Series

N-Channel Logic Level UltraFET Power MOSFET 60V, 44A, 25mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	FET Type
ON Semiconductor HUF76429S3ST	47 A	22 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	46 nC	4.5 V 10 V	110 W	1480 pF	Surface Mount	-55 °C	175 ░C	16 V	3 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)	60 V	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Logic Level UltraFET Power MOSFET 60 V, 44 A, 25 mΩ

Technical documentation and resources