Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ5E025SNTL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 4.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 165 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-96 |
| Power Dissipation (Max) [Max] | 700 mW |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | TSMT3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ5E025SN Series
RQ5E025SN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.
Documents
Technical documentation and resources