Zenode.ai Logo
Beta
SC−75-3_463
Discrete Semiconductor Products

DTC123EET1

Obsolete
ON Semiconductor

TRANS PREBIAS NPN 50V 0.1A SC75

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
SC−75-3_463
Discrete Semiconductor Products

DTC123EET1

Obsolete
ON Semiconductor

TRANS PREBIAS NPN 50V 0.1A SC75

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationDTC123EET1
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce8 hFE
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Power - Max [Max]200 mW
Resistor - Base (R1)2.2 kOhm
Resistor - Emitter Base (R2)2.2 kOhms
Supplier Device PackageSOT-416, SC-75
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

DTC123EM3 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Documents

Technical documentation and resources